? semiconductor components industries, llc, 2006 march, 2006 ? rev. 5 1 publication order number: 2N5457/d 2N5457, 2n5458 preferred device jfets ? general purpose n?channel ? depletion n?channel junction field effect transistors, depletion mode (type a) designed for audio and switching applications. features ? n?channel for higher gain ? drain and source interchangeable ? high ac input impedance ? high dc input resistance ? low transfer and input capacitance ? low cross?modulation and intermodulation distortion ? unibloc plastic encapsulated package ? pb?free packages are available* maximum ratings rating symbol value unit drain ?source voltage v ds 25 vdc drain ?gate voltage v dg 25 vdc reverse gate ?source voltage v gsr ?25 vdc gate current i g 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 310 2.82 mw mw/ c operating junction temperature t j 135 c storage temperature range t stg ?65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information 2N5457 to?92 1000 units/box preferred devices are recommended choices for future use and best overall value. 2n5458 to?92 1000 units/box http://onsemi.com 1 drain 2 source 3 gate 2n5458g to?92 (pb?free) 1000 units/box 2N5457g to?92 (pb?free) 1000 units/box marking diagram to?92 case 29 style 5 1 2 3 2n 545x ayww 2n545x = device code x = 7 or 8 a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location)
2N5457, 2n5458 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate ?source breakdown voltage (i g = ?10 adc, v ds = 0) v (br)gss ?25 ? ? vdc gate reverse current (v gs = ?15 vdc, v ds = 0) (v gs = ?15 vdc, v ds = 0, t a = 100 c) i gss ? ? ? ? ? 1.0 ?200 nadc gate?source cutoff voltage 2N5457 (v ds = 15 vdc, i d = 10 nadc) 2n5458 v gs(off) ?0.5 ?1.0 ? ? ?6.0 ?7.0 vdc gate?source voltage (v ds = 15 vdc, i d = 100 adc) 2N5457 (v ds = 15 vdc, i d = 200 adc) 2n5458 v gs ? ? ?2.5 ?3.5 ? ? vdc on characteristics zero?gate?voltage drain current (note 1) 2N5457 (v ds = 15 vdc, v gs = 0) 2n5458 i dss 1.0 2.0 3.0 6.0 5.0 9.0 madc dynamic characteristics forward transfer admittance (note 1) 2N5457 (v ds = 15 vdc, v gs = 0, f = 1 khz) 2n5458 |y fs | 1000 1500 3000 4000 5000 5500 mhos output admittance common source (note 1) (v ds = 15 vdc, v gs = 0, f = 1 khz) |y os | ? 10 50 mhos input capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c iss ? 4.5 7.0 pf reverse transfer capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c rss ? 1.5 3.0 pf 1. pulse width 630 ms, duty cycle 10%.
2N5457, 2n5458 http://onsemi.com 3 figure 1. noise figure versus source resistance v ds , drain?source voltage (volts) figure 2. typical drain characteristics v gs , gate?source voltage (volts) figure 3. common source transfer characteristics 1.0 0.4 0.2 0 ?1.2 0.8 0.6 0 5 10 15 20 25 0 0.6 0.4 0.2 0.8 1.2 1.0 ?0.8 ?0.4 0 1.2 , drain current (ma) d i , drain current (ma) d i v ds = 15 v v gs = 0 v ?0.2 v ?0.4 v ?0.6 v ?0.8 v ?1.0 v v gs(off) ?1.2 v v gs(off) ?1.2 v r s , source resistance (megohms) 14 12 10 8 6 4 2 0 nf, noise figure (db) 0.001 0.01 0.1 1.0 10 v ds = 15 v v gs = 0 f = 1 khz typical characteristics for 2N5457 only
2N5457, 2n5458 http://onsemi.com 4 v ds , drain?source voltage (volts) figure 4. typical drain characteristics v gs , gate?source voltage (volts) figure 5. common source transfer characteristics v ds , drain?source voltage (volts) figure 6. typical drain characteristics v gs , gate ? source voltage (volts) figure 7. common source transfer characteristics 0 0 4 3 2 1 0 10 4 2 0 ?4 5 510152025 5 4 3 2 1 0 ?7 8 6 ?6 ?5 ?4 ?3 ?2 ?1 ?5 ?3 ?2 ?1 0 , drain current (ma) d i v ds = 15 v v gs(off) ?5.8 v , drain current (ma) d i , drain current (ma) d i , drain current (ma) d i v ds = 15 v 10 4 2 0 8 6 0 5 10 15 20 25 v gs(off) ?5.8 v v gs = 0 v v gs = 0 v ?2 v ?1 v ?3 v ?1 v ?2 v ?3 v ?4 v ?5 v v gs(off) ?3.5 v v gs(off) ?3.5 v note: note: graphical data is presented for dc conditions. tabular data is given for pulsed conditions (pulse width = 630 ms, duty cycle = 10%). under dc conditions, self heating in higher i dss units reduces i dss . typical characteristics for 2N5457 only
2N5457, 2n5458 http://onsemi.com 5 package dimensions case 29?11 issue al to?92 (to?226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 tyle 5: pin 1. drain 2. source 3. gate on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2N5457/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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